NDLI: A fully integrated low-power CMOS particle detector front-end for space applications

Content Provider	IEEE Xplore Digital Library
Author	Vandenbussche, J. Leyn, F. Van der Plas, G. Gielen, G. Sansen, W.
Copyright Year	1963
Abstract	A fully integrated low-power complementary metal-oxide-semiconductor (CMOS) particle detector front-end (PDFE), optimized for space applications, is presented. The front-end comprises a charge sensitive amplifier and a four-stage semi-Gaussian pulse-shaping amplifier. The chip was custom synthesized with an analog synthesis environment. With a power consumption of only 10 mW and a chip area less than 1 mm/sup 2/, the chip is very well suited for the stringent demands in space applications. Measurements show a peaking time of 1.2 /spl mu/s and a total equivalent noise charge of less than 1000 e/sub rms//sup -/. Although a standard 0.7-/spl mu/m CMOS was used, little performance degradation was observed after exposure to a total dose irradiation of 50 kRad. All tested chips fully recovered within specifications, after 24 h of annealing at room temperature.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2272
Ending Page	2278
Page Count	7
File Size	883309
File Format	PDF
ISSN	00189499
Volume Number	45
Issue Number	4
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiation detectors Pulse amplifiers Energy consumption Current measurement Charge measurement Noise measurement Semiconductor device measurement Time measurement Working environment noise Degradation
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Design of Low-Noise Vacuum-Tube Pulse Amplifiers for Semiconductor Radiation-Detector Spectroscopy

X-Ray Silicon Drift Detector–CMOS Front-End System with High Energy Resolution at Room Temperature

Front end Electronics for SLHC Semiconductor Trackers in CMOS 90 nm and 130 nm Processes

A Mixed-Signal Spectroscopic-Grade and High-Functionality CMOS Readout Cell for Semiconductor X-$gamma$ Ray Pixel Detectors

Design and performance of a low-noise, low-power consumption CMOS charge amplifier for capacitive detectors

A low-power variable-gain front-end amplifier in a 0.25 /spl mu/m CMOS technology

A low power low noise amplifier for a 128 channel detector read-out chip

Design of Low-Noise Vacuum-Tube Pulse Amplifiers for Semiconductor-Detector Spectroscopy

Study of the radiation hardness of irradiated AToM front-end chips of the BaBar silicon vertex tracker

A fully integrated low-power CMOS particle detector front-end for space applications

Similar Documents

Design of Low-Noise Vacuum-Tube Pulse Amplifiers for Semiconductor Radiation-Detector Spectroscopy

X-Ray Silicon Drift Detector–CMOS Front-End System with High Energy Resolution at Room Temperature

Front end Electronics for SLHC Semiconductor Trackers in CMOS 90 nm and 130 nm Processes

A Mixed-Signal Spectroscopic-Grade and High-Functionality CMOS Readout Cell for Semiconductor X-$gamma$ Ray Pixel Detectors

Design and performance of a low-noise, low-power consumption CMOS charge amplifier for capacitive detectors

A low-power variable-gain front-end amplifier in a 0.25 /spl mu/m CMOS technology

A low power low noise amplifier for a 128 channel detector read-out chip

Design of Low-Noise Vacuum-Tube Pulse Amplifiers for Semiconductor-Detector Spectroscopy

Study of the radiation hardness of irradiated AToM front-end chips of the BaBar silicon vertex tracker

A fully integrated low-power CMOS particle detector front-end for space applications