NDLI: Conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Colinge, J.-P.
Copyright Year	1963
Abstract	A model developed to explain conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETs is discussed. It is found that, unlike that which occurs in thin-film fully depleted n-channel devices, there is little or no coupling between the front and back gates, unless the surface-state density is so high that the film remains depleted even when an accumulation channel is formed. The apparent front threshold shift is explained by back-gate modulation of a body current, flowing from the source to the drain. Indeed, the body of the device presents a p/sup +/-p/sup -/-p/sup +/ structure whose conductivity is controlled by the depth of the depletion zones arising from the top and the bottom of the silicon film. The model is used to calculate drain current as a function of front- and back-gate bias as well as output characteristics.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	718
Ending Page	723
Page Count	6
File Size	490054
File Format	PDF
ISSN	00189383
Volume Number	37
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFETs Thin film transistors Silicon Semiconductor films Conductive films Threshold voltage Thin film devices Conductivity Doping Surface treatment
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Erratum: Problems in designing thin-film accumulation-mode p-channel SOI MOSFETs for CMOS digital circuit environment

Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors

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Threshold voltage instability at low temperatures in partially depleted thin-film SOI MOSFETs

Temperature dependence of threshold voltage in thin-film SOI MOSFETs

Submicrometer near-intrinsic thin-film SOI complementary MOSFETs

On the high-temperature subthreshold slope of thin-film SOI MOSFETs

Analytical models of subthreshold swing and threshold voltage for thin- and ultra-thin-film SOI MOSFETs

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Conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETs

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Reduction of kink effect in thin-film SOI MOSFETs

Threshold voltage instability at low temperatures in partially depleted thin-film SOI MOSFETs

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