NDLI: Simulation of density variation and step coverage for a variety of via/contact geometries using SIMBAD

Content Provider	IEEE Xplore Digital Library
Author	Smy, T. Westra, K.L. Brett, M.J.
Copyright Year	1963
Abstract	The two-dimensional simulation by ballistic deposition of sputtered metal deposited over a 1.5- mu m step and a large variety of vias and contacts is presented. The sizes of the vias and contacts are varied from 1 to 3 mu m, and three different sidewall topographies are simulated. In addition, simulated film growth over a stacked via/contact is presented. The step coverage of each film is determined, and surface profiles are provided at different growth intervals. The use of SIMBAD, a ballistic deposition technique, provides information unattainable through the use of conventional film deposition simulations. In addition to the step coverage available from conventional simulations, density profiles of the simulated films are produced and the columnar microstructure is analyzed. Finally, conclusions are inferred as to the quality of real films deposited over each via geometry.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	591
Ending Page	598
Page Count	8
File Size	1241480
File Format	PDF
ISSN	00189383
Volume Number	37
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Solid modeling Geometry Microscopy Surface topography Contacts Dielectric thin films Microstructure Microelectronics Substrates Analytical models
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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