NDLI: Monte Carlo simulation of 0.35- mu m gate-length GaAs and InGaAs HEMTs

Content Provider	IEEE Xplore Digital Library
Author	Park, D.H. Brennan, K.F.
Copyright Year	1963
Abstract	A first-principles theoretical comparison of the performances of identical Al/sub 0.32/Ga/sub 0.68/As/GaAs and Al/sub 0.15/Ga/sub 0.15/As/In/sub 0.15/Ga/sub 0.85/As/GaAs pseudomorphic HEMTs based on an ensemble Monte Carlo simulation coupled with a two-dimensional Poisson solver is presented. The Monte Carlo calculations incorporate the full physics of the device operation. As a test of the accuracy with which the calculations successfully model a real device, the calculated current-voltage characteristic of the pseudomorphic device is first compared to recent experimental measurements made on a comparable structure, showing excellent agreement over a full range of gate and drain biases. The device performance as measured in terms of the transconductance, cutoff frequency, and current-voltage characteristics of both devices can then be compared as a function of gate and drain bias. It is found that the pseudomorphic HEMT outperforms the conventional GaAs/AlGaAs device by approximately a factor of two in the above-mentioned criteria. The greatly improved performance of the pseudomorphic HEMT over the GaAs device stems predominantly from greater confinement of the electrons within the high-mobility two-dimensional system, higher electron drift velocity, and greater gamma valley confinement.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	618
Ending Page	628
Page Count	11
File Size	1200233
File Format	PDF
ISSN	00189383
Volume Number	37
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1990-03-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Indium gallium arsenide PHEMTs Current-voltage characteristics Current measurement Electrons Monte Carlo methods Physics Testing Performance evaluation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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