NDLI: Variation-Tolerant High-Reliability Sensing Scheme for Deep Submicrometer STT-MRAM

Content Provider	IEEE Xplore Digital Library
Author	Wang Kang Zheng Li Zhaohao Wang Deng, E. Klein, J.-O. Youguang Zhang Chappert, C. Ravelosona, D. Weisheng Zhao
Copyright Year	1965
Abstract	Spin-transfer torque magnetic random access memory (STT-MRAM) has emerged as a promising candidate for the next-generation high-speed, low-power, and scalable nonvolatile memory technology. Its advantageous features have attracted much attention in the area of research and development, and a number of preindustrial prototypes and small-scale products have been demonstrated. One expects to widely commercialize it in the next few years. One of the critical issues that blocks STT-MRAM's wide commercialization is its low sensing reliability due to the relatively small tunnel magnetoresistance ratio of the magnetic tunnel junction (MTJ) and the continuously increasing process variations, especially as technology process scales down to the deep submicrometer nodes (e.g., 40 nm). In this paper, we present a variation-tolerant high-reliability sensing circuit for deep submicrometer STT-MRAM. This circuit, using triple-stage sensing and charge transfer amplification, is able to tolerate significantly the process variations and improve greatly the sensing margin by sacrificing some sensing time. Using a CMOS 40 nm design kit and a precise STT-MTJ compact model, transient and Monte Carlo simulations have been carried out to demonstrate its sensing performance.
Sponsorship	IEEE Magnetics Society
Starting Page	1
Ending Page	4
Page Count	4
File Size	973968
File Format	PDF
ISSN	00189464
Volume Number	50
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Sensors Magnetic tunneling CMOS integrated circuits Integrated circuit reliability Switches Torque spin-transfer torgue magnetic RAM (STT-MRAM) High reliability nonvolatile process variation sensing circuit
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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