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Content Provider | IEEE Xplore Digital Library |
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Author | Hirayama, J. Tanikawa, K. Kawano, M. Yamada, S. Miyao, M. Hamaya, K. |
Copyright Year | 1965 |
Abstract | We present a heat-treatment-free fabrication technique for pseudo current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) structures with a highly spin-polarized Co-based Heusler-compound electrode. Room-temperature molecular beam epitaxy enables an all-epitaxial Heusler compound/metallic spacer/Heusler compound, i.e., Fe3Si/FeSi/Co2FeSi, trilayer structure. Since each layer includes ideally ordered structures, the magnetization reversal process of the trilayer is changed from two-step switching to one-step switching upon cooling through the paramagnetic-ferromagnetic transition of the ordered FeSi spacer layer. This paper will open a way for high-performance CPP-GMR devices with Co-based Heusler compounds. |
Sponsorship | IEEE Magnetics Society |
Starting Page | 1 |
Ending Page | 3 |
Page Count | 3 |
File Size | 703466 |
File Format | |
ISSN | 00189464 |
Volume Number | 50 |
Issue Number | 11 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2014-01-01 |
Publisher Place | U.S.A. |
Access Restriction | One Nation One Subscription (ONOS) |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Compounds Silicon Molecular beam epitaxial growth Temperature measurement Atomic layer deposition Giant magnetoresistance molecular beam epitaxy (MBE) Atomic arrangement matching current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) Heusler compounds |
Content Type | Text |
Resource Type | Article |
Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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