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Chemical vapor deposition modeling for high temperature materials
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Goekoglu, Sueleyman |
| Copyright Year | 1992 |
| Description | The formalism for the accurate modeling of chemical vapor deposition (CVD) processes has matured based on the well established principles of transport phenomena and chemical kinetics in the gas phase and on surfaces. The utility and limitations of such models are discussed in practical applications for high temperature structural materials. Attention is drawn to the complexities and uncertainties in chemical kinetics. Traditional approaches based on only equilibrium thermochemistry and/or transport phenomena are defended as useful tools, within their validity, for engineering purposes. The role of modeling is discussed within the context of establishing the link between CVD process parameters and material microstructures/properties. It is argued that CVD modeling is an essential part of designing CVD equipment and controlling/optimizing CVD processes for the production and/or coating of high performance structural materials. |
| File Size | 11984924 |
| Page Count | 17 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19920009215 |
| Archival Resource Key | ark:/13960/t15n14g9t |
| Language | English |
| Publisher Date | 1992-01-01 |
| Access Restriction | Open |
| Subject Keyword | Refractory Materials Vapor Deposition Thermochemistry Vapor Phases Reaction Kinetics Coating High Temperature Formalism Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
