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Single event effects (see) for power metal-oxide-semiconductor field-effect transistors (mosfets)
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Lauenstein, Jean-Marie |
| Copyright Year | 2011 |
| Description | Single-event gate rupture (SEGR) continues to be a key failure mode in power MOSFETs. (1) SEGR is complex, making rate prediction difficult SEGR mechanism has two main components: (1) Oxide damage-- Reduces field required for rupture (2) Epilayer response -- Creates transient high field across the oxide. |
| File Size | 1450266 |
| Page Count | 23 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20110022531 |
| Archival Resource Key | ark:/13960/t7zm0bb64 |
| Language | English |
| Publisher Date | 2011-01-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Gates Circuits Metal Oxide Semiconductors Field Effect Transistors Single Event Upsets Failure Modes Power Supply Circuits Damage Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Presentation |
