Loading...
Please wait, while we are loading the content...
Similar Documents
Single event gate rupture characterization of the fuji mosfets: 2sj1a03 (a08p10), 2sj1a09 (a08p20), and nsd1a01
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Scheick, Leif |
| Copyright Year | 2014 |
| Description | This testing is to characterize the power MOSFETs for single-event gate rupture (SEGR) and single-event burnout (SEB) response. Test results were compared against comparable voltage rated devices. |
| File Size | 2635240 |
| Page Count | 41 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20140011399 |
| Archival Resource Key | ark:/13960/t4mm1b48v |
| Language | English |
| Publisher Date | 2014-01-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Gates Circuits Electric Potential Burnout Metal Oxide Semiconductors Field Effect Transistors Bias Electronic Equipment Tests Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |