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Silicon surface passivation by silicon nitride deposition
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Olsen, L. C. |
| Copyright Year | 1984 |
| Description | Silicon nitride deposition was studied as a method of passivation for silicon solar cell surfaces. The following three objectives were the thrust of the research: (1) the use of pecvd silicon nitride for passivation of silicon surfaces; (2) measurement techniques for surface recombination velocity; and (3) the importance of surface passivation to high efficiency solar cells. |
| File Size | 296157 |
| Page Count | 13 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19850024110 |
| Archival Resource Key | ark:/13960/t9n34pq0d |
| Language | English |
| Publisher Date | 1984-10-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Photosensitivity Doped Crystals Least Squares Method Efficiency Silicon Oxides Recombination Reactions Silicon Nitrides Silicon Parameter Identification Passivity Deposition Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
