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Effects of impurities on silicon solar-cell performance
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Hopkins, R. H. |
| Copyright Year | 1986 |
| Description | Model analyses indicate that sophisticated solar cell designs (back surface fields, optical reflectors, surface passivation, and double layer antireflective coatings) can produce devices with conversion efficiencies above 20%. To realize this potential, the quality of the silicon from which the cells are made must be improved; and these excellent electrical properties must be maintained during device processing. As the cell efficiency rises, the sensitivity to trace contaminants also increases. For example, the threshold Ti impurity concentraion at which cell performance degrades is more than an order of magnitude lower for an 18% cell than for a 16% cell. Similar behavior occurs for numerous other metal species which introduce deep level traps that stimulate the recombination of photogenerated carriers in silicon. Purification via crystal growth in conjunction with gettering steps to preserve the large diffusion length of the as grown material can lead to the production of devices with efficiencies above 18%, as verified experimentally. |
| File Size | 1053729 |
| Page Count | 22 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19860017208 |
| Archival Resource Key | ark:/13960/t77t2kj3k |
| Language | English |
| Publisher Date | 1986-02-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Crystal Growth Silicon Compounds Structural Design Heat Treatment Doped Crystals Impurities Least Squares Method Recombination Reactions Mathematical Models Parameter Identification Energy Conversion Efficiency Ntrs Nasa Technical Reports ServerĀ (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |