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Atomic layer deposition of chemical passivation layers and high performance anti-reflection coatings on back-illuminated detectors
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 2014 |
| Description | A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition. |
| File Size | 2903512 |
| Page Count | 27 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20150003235 |
| Archival Resource Key | ark:/13960/t8nd0zk45 |
| Language | English |
| Publisher Date | 2014-03-25 |
| Access Restriction | Open |
| Subject Keyword | Patents Vapor Deposition Doped Crystals Silicon Oxides Molecular Beam Epitaxy Electromagnetic Radiation Passivity Antireflection Coatings Aluminum Oxides Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
