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Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 c
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Pouch, J. J. Pantic, D. M. Johnson, G. A. Alterovitz, S. A. Miyoshi, K. |
| Copyright Year | 1988 |
| Description | The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively. |
| File Size | 779208 |
| Page Count | 14 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19890002542 |
| Archival Resource Key | ark:/13960/t6644n46r |
| Language | English |
| Publisher Date | 1988-01-01 |
| Access Restriction | Open |
| Subject Keyword | Nonmetallic Materials Thin Films Doped Crystals Friction Temperature Effects Surface Reactions Wear Failure Analysis Silicon Nitrides Adhesion Deposition Tribology Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
