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Use of low-energy hydrogen ion implants in high-efficiency crystalline-silicon solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Mu, H. C. Sigh, R. Fonash, S. J. |
| Copyright Year | 1986 |
| Description | The use of low-energy hydrogen implants in the fabrication of high-efficiency crystalline silicon solar cells was investigated. Low-energy hydrogen implants result in hydrogen-caused effects in all three regions of a solar cell: emitter, space charge region, and base. In web, Czochralski (Cz), and floating zone (Fz) material, low-energy hydrogen implants reduced surface recombination velocity. In all three, the implants passivated the space charge region recombination centers. It was established that hydrogen implants can alter the diffusion properties of ion-implanted boron in silicon, but not ion-implated arsenic. |
| File Size | 187438 |
| Page Count | 9 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19870006992 |
| Archival Resource Key | ark:/13960/t1fj7bp87 |
| Language | English |
| Publisher Date | 1986-01-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Ion Implantation Doped Crystals Hydrogen Recombination Reactions Space Charge Emitters Energy Conversion Efficiency Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
