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Fabrication and high temperature characteristics of ion-implanted gaas bipolar transistors and ring-oscillators
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Doerbeck, F. H. McLevige, W. V. Yuan, H. T. |
| Copyright Year | 1981 |
| Description | Ion implantation techniques that permit the reproducible fabrication of bipolar GaAs integrated circuits are studied. A 15 stage ring oscillator and discrete transistor were characterized between 25 and 400 C. The current gain of the transistor was found to increase slightly with temperature. The diode leakage currents increase with an activation energy of approximately 1 eV and dominate the transistor leakage current 1 sub CEO above 200 C. Present devices fail catastrophically at about 400 C because of Au-metallization. |
| File Size | 510707 |
| Page Count | 4 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19820007447 |
| Archival Resource Key | ark:/13960/t8rc1vz3b |
| Language | English |
| Publisher Date | 1981-01-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Fabrication Integrated Circuits Bipolar Transistors Annealing Gallium Arsenides Ion Implantation High Temperature Tests Semiconductor Diodes High Temperature Environments Oscillators Failure Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
