NDLI: Silicon carbide semiconductor device fabrication and characterization

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Silicon carbide semiconductor device fabrication and characterization

Content Provider	NASA Technical Reports Server (NTRS)
Author	Davis, R. F. Das, K.
Copyright Year	1990
Description	A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated.
File Size	1389195
Page Count	34
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_19900010557
Archival Resource Key	ark:/13960/t9t19x230
Language	English
Publisher Date	1990-02-08
Access Restriction	Open
Subject Keyword	Solid-state Physics Rectification Gold Annealing Ion Implantation Semiconductor Devices Field Effect Transistors Capacitors Silicon Carbides High Temperature Junction Diodes Diodes Substrates Sputtering Fabrication Platinum Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Technical Report

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