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Gaas transistors formed by be or mg ion implantation
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Marsh, O. J. Hunsperger, R. G. |
| Copyright Year | 1974 |
| Description | N-p-n transistor structures have been formed in GaAs by implanting n-type substrates with Be ions to form base regions and then implanting them with 20-keV Si ions to form emitters. P-type layers have been produced in GaAs by implantation of either Mg or Be ions, with substrate at room temperature, followed by annealing at higher temperatures. |
| File Size | 81934 |
| Page Count | 1 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19730000442 |
| Archival Resource Key | ark:/13960/t6k11vc16 |
| Language | English |
| Publisher Date | 1974-02-01 |
| Access Restriction | Open |
| Subject Keyword | Electronic Components And Circuits Gallium Arsenides Beryllium Implantation Ions Magnesium Transistors Substrates Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
