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A gallium phosphide high-temperature bipolar junction transistor
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Zipperian, T. E. Chaffin, R. J. Dawson, L. R. |
| Copyright Year | 1981 |
| Description | Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures. |
| File Size | 340946 |
| Page Count | 3 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19820007450 |
| Archival Resource Key | ark:/13960/t2993253w |
| Language | English |
| Publisher Date | 1981-01-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Bipolar Transistors Nucleation Field Effect Transistors High Temperature Environments Fabrication Junction Transistors Gallium Phosphides Liquid Phase Epitaxy Graphite Supercooling Magnesium Thermionic Emitters P-n Junctions Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
