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Ohmic contacts to gaas for high-temperature device applications
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Christou, A. Dietrich, H. B. Anderson Jr., W. T. Giuliani, J. F. |
| Copyright Year | 1981 |
| Description | Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs. Contacts with high dose Si or Se ion implantation of the Ge/GaAs interface were also investigated. The contacts were fabricated on epitaxial GaAs layer grown on N+ or semi-insulating GaAs substrates. Ohmic contact was formed by both thermal annealing (at temperatures up to 700 C) and laser annealing (pulsed Ruby). Examination of the Ge/GaAs interface revealed Ge migration into GaAs to form an N+ doping layer. The specific contact resistances of specimens annealed by both methods are given. |
| File Size | 503064 |
| Page Count | 4 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19820007446 |
| Archival Resource Key | ark:/13960/t19k95818 |
| Language | English |
| Publisher Date | 1981-01-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Gallium Arsenides Ion Implantation Electric Contacts Auger Spectroscopy Contact Resistance High Temperature Environments Thermal Stability Titanium Alloys Germanium Alloys Metal Films Refractory Metal Alloys N-type Semiconductors Laser Annealing Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
