NDLI: Prediction of Electromigration Failure in Passivated Polycrystalline Line Considering Passivation Thickness

Content Provider	The American Society of Mechanical Engineers (ASME) Digital Collection
Author	Sasagawa, Kazuhiko Hasegawa, Masataka Yoshida, Naoki Saka, Masumi Abe´, Hiroyuki
Copyright Year	2003
Abstract	It is known that the lifetime of the passivated metal line varies depending on kind and thickness of the passivation layer. The appropriate consideration of the effect of passivation on electromigration damage makes it possible to evaluate the reliability of the metal line with choosing kind or thickness of the passivation. This paper is focused on the effect of passivation thickness on the failure prediction. The failure prediction considering the passivation thickness is shown. First, the film characteristic constants depending on the passivation thickness are experimentally determined in the lines with three kinds of passivation thickness. Next, by extrapolating the obtained dependencies, the characteristic constants are determined to predict the lifetime of the line covered with the thicker passivation than that employed in the experiment, and the lifetime is predicted by the reliability evaluation method based on the numerical simulation.
Sponsorship	Electronic and Photonic Packaging Division
Starting Page	723
Ending Page	728
Page Count	6
File Format	PDF
ISBN	0791836908
DOI	10.1115/IPACK2003-35065
e-ISBN	0791836746
Volume Number	2003 International Electronic Packaging Technical Conference and Exhibition, Volume 1
Conference Proceedings	ASME 2003 International Electronic Packaging Technical Conference and Exhibition
Language	English
Publisher Date	2003-07-06
Publisher Place	Maui, Hawaii, USA
Access Restriction	Subscribed
Subject Keyword	Evaluation methods Computer simulation Metals Electrodiffusion Reliability Damage Failure
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Effect of Line-Shape on Threshold Current Density of Electromigration Damage in Bamboo Lines

Failure Simulation of Angled Polycrystalline Lines Covered With Passivation Layer

Analysis for Evaluation of Threshold Current Density of Electromigration Damage in Taper-Shaped Metal Line

Evaluation of Threshold Current Density of Electromigration Damage in Angled Bamboo Lines

Expression of a Governing Parameter for Electromigration Damage on Metal Line Ends

Numerical Simulation of Threshold Current Density of Electromigration Damage in Cu Interconnect Tree

Relationship Between Threshold Current Density of Electromigration Damage Considering Void and Hillock Formation and Reservoir Shape in Interconnect Line

Study of a new electromigration failure mechanism by novel test structure

Stress-induced and electromigration voiding in nitride passivated al interconnects (1999).

Prediction of Electromigration Failure in Passivated Polycrystalline Line Considering Passivation Thickness

Similar Documents

Effect of Line-Shape on Threshold Current Density of Electromigration Damage in Bamboo Lines

Failure Simulation of Angled Polycrystalline Lines Covered With Passivation Layer

Analysis for Evaluation of Threshold Current Density of Electromigration Damage in Taper-Shaped Metal Line

Evaluation of Threshold Current Density of Electromigration Damage in Angled Bamboo Lines

Expression of a Governing Parameter for Electromigration Damage on Metal Line Ends

Numerical Simulation of Threshold Current Density of Electromigration Damage in Cu Interconnect Tree

Relationship Between Threshold Current Density of Electromigration Damage Considering Void and Hillock Formation and Reservoir Shape in Interconnect Line

Study of a new electromigration failure mechanism by novel test structure

Stress-induced and electromigration voiding in nitride passivated al interconnects (1999).

Prediction of Electromigration Failure in Passivated Polycrystalline Line Considering Passivation Thickness