NDLI: STT-RAM cell design optimization for persistent and non-persistent error rate reduction: a statistical design view

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STT-RAM cell design optimization for persistent and non-persistent error rate reduction: a statistical design view

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STT-RAM cell design optimization for persistent and non-persistent error rate reduction: a statistical design view

Content Provider	ACM Digital Library
Author	Chen, Yiran Zhang, Yaojun Wang, Xiaobin
Abstract	The rapidly increased demands for memory in electronic industry and the significant technical scaling challenges of all conventional memory technologies motivated the researches on the next generation memory technology. As one promising candidate, spintransfer torque random access memory (STT-RAM) features fast access time, high density, non-volatility, and good CMOS process compatibility. However, like all other nano-scale devices, the performance and reliability of STT-RAM cells are severely affected by process variations, intrinsic device operating uncertainties and environmental fluctuations. In this work, we systematically analyze the impacts of CMOS and MTJ process variations, MTJ switching uncertainties induced by thermal fluctuations and working temperature on the performance and reliability of STT-RAM cells. A combined circuit and magnetic simulation platform is also established to quantitatively analyze the persistent and non-persistent error rates during the STT-RAM cell operations. Finally, an optimization flow and its effectiveness are depicted by using some STT-RAM cell designs as case study.
Starting Page	471
Ending Page	477
Page Count	7
File Format	PDF
ISBN	9781457713989
ISSN	10923152
Language	English
Publisher	Association for Computing Machinery (ACM)
Publisher Date	2011-11-07
Access Restriction	Subscribed
Subject Keyword	Spin-transfer torque (stt) Persistent error Magnetic ram Process variation Non-persistent error
Content Type	Text
Resource Type	Article
Subject	Computer Graphics and Computer-Aided Design Software Computer Science Applications

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