NDLI: Recovery characteristics of solution-processed ZTO thin-film transistors

Content Provider	Springer Nature Link
Author	Yu, Kyeong Min Choi, Jang Kyu Bae, Byung Seong Song, Jae Min Yun, Eui Jung
Copyright Year	2013
Abstract	We investigated the negative-bias illumination stress (NBIS) and the recovery characteristics of solution-processed amorphous zinc-tin-oxide (ZTO)-based thin-film transistors (TFTs). We developed TFTs with a bottom gate structure that used SiO$_{2}$ films for the gate insulator. The developed TFTs were under NBIS in air at room temperature (RT) with a gate-to-source voltage of −10 V and a white-light power density of 6.2 mW/cm$^{2}$. For the devices under NBIS, the NBIS-induced instability is attributed to the combined effects of 1) the creation of a low density of subgap states such as ionized oxygen vacancies (V o 2+ ) near the Fermi level in ZTO, 2) a fast and large increase in the photo-conductivity at the off-state due to photo-induced band-to-band electron-hole pair generation, and 3) the hole trapping near the ZTO/SiO$_{2}$ interface. The devices under NBIS also exhibit fast exponential recovery characteristics at RT, which are attributed dominantly to detrapping of holes near the ZTO/SiO$_{2}$ interface and partially to the weak stabilization of V o 2+ near the interface.
Starting Page	2281
Ending Page	2286
Page Count	6
File Format	PDF
ISSN	03744884
Journal	Journal of the Korean Physical Society
Volume Number	63
Issue Number	12
e-ISSN	19768524
Language	English
Publisher	Springer Netherlands
Publisher Date	2013-12-29
Publisher Place	Dordrecht
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Solution-processed amorphous zinc-tin-oxide (a-ZTO) Theoretical, Mathematical and Computational Physics Negative-bias illumination stress (NBIS) Thin-film transistors (TFTs) Physics Particle and Nuclear Physics Recovery characteristic
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

The Effect of UV treatment on the recovery characteristics of a-IGZO-based thin film transistors

Mechanical Stress Stability of Flexible Amorphous Zinc Tin Oxide Thin-Film Transistors

Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiO_x films

Suppressed Instability of a-IGZO Thin-Film Transistors Under Negative Bias Illumination Stress Using the Distributed Bragg Reflectors

Effects of negative gate-bias stress on the performance of solution-processed zinc-oxide transistors

Charge transport at high temperatures in solution-processed zinc-tin-oxide thin-film transistors

Effect of sulfur incorporation on solution-processed ZTO thin-film transistors

Electrical properties of thin film transistors with zinc tin oxide channel layer

The Anomalous Effect of Oxygen Ratio on the Mobility and Photobias Stability of Sputtered Zinc–Tin–Oxide Transistors

Recovery characteristics of solution-processed ZTO thin-film transistors

Similar Documents

The Effect of UV treatment on the recovery characteristics of a-IGZO-based thin film transistors

Mechanical Stress Stability of Flexible Amorphous Zinc Tin Oxide Thin-Film Transistors

Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiOx films

Suppressed Instability of a-IGZO Thin-Film Transistors Under Negative Bias Illumination Stress Using the Distributed Bragg Reflectors

Effects of negative gate-bias stress on the performance of solution-processed zinc-oxide transistors

Charge transport at high temperatures in solution-processed zinc-tin-oxide thin-film transistors

Effect of sulfur incorporation on solution-processed ZTO thin-film transistors

Electrical properties of thin film transistors with zinc tin oxide channel layer

The Anomalous Effect of Oxygen Ratio on the Mobility and Photobias Stability of Sputtered Zinc–Tin–Oxide Transistors

Recovery characteristics of solution-processed ZTO thin-film transistors

Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiO_x films