NDLI: Electrical properties of thin film transistors with zinc tin oxide channel layer

Content Provider	Springer Nature Link
Author	Hong, Seunghwan Oh, Gyujin Kim, Eun Kyu
Copyright Year	2017
Abstract	We have investigated thin film transistors (TFTs) with zinc tin oxide (ZTO) channel layer fabricated by using an ultra-high vacuum radio frequency sputter. ZTO thin films were grown at room temperature by co-sputtering of ZnO and SnO$_{2}$, which applied power for SnO$_{2}$ target was varied from 15 W to 90 W under a fixed sputtering power of 70 W for ZnO target. A post-annealing treatment to improve the film quality was done at temperature ranges from 300 to 600 °C by using the electrical furnace. The ZTO thin films showed good electrical and optical properties such as Hall mobility of more than 9 cm$^{2}$/V·s, specific resistivity of about 2 × 10$^{2}$ Ω·cm, and optical transmittance of 85% in visible light region by optical bandgap of 3.3 eV. The ZTO-TFT with an excellent performance of channel mobility of 19.1 cm$^{2}$/V·s and on-off ratio (I $_{ on }$/I $_{ off }$) of 10$^{4}$ was obtained from the films grown with SnO$_{2}$ target power of 25 W and post-annealed at 450 °C. This result showed that ZTO film is promising on application to a high performance transparent TFTs.
Starting Page	500
Ending Page	505
Page Count	6
File Format	PDF
ISSN	03744884
Journal	Journal of the Korean Physical Society
Volume Number	71
Issue Number	8
e-ISSN	19768524
Language	English
Publisher	The Korean Physical Society
Publisher Date	2017-10-11
Publisher Place	Seoul
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	UHV RF sputter Theoretical, Mathematical and Computational Physics Oxide semiconductor Thin film transistors Zinc tin oxide (ZTO) Physics Particle and Nuclear Physics
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Recovery characteristics of solution-processed ZTO thin-film transistors

Effect of sulfur incorporation on solution-processed ZTO thin-film transistors

Charge transport at high temperatures in solution-processed zinc-tin-oxide thin-film transistors

Mechanical Stress Stability of Flexible Amorphous Zinc Tin Oxide Thin-Film Transistors

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

Effect of the interlayer for source-drain electrodes on a solution-processed zinc-tin-oxide TFT

Performance enhancement of fully transparent tin-doped zinc oxide thin-film transistors fabricated by sputtering at low temperature

Inkjet-printed zinc-tin-oxide TFTs with a solution-processed hybrid dielectric layer

A study on the high temperature-dependence of the electrical properties in a solution-deposited zinc-tin-oxide thin-film transistor operated in the saturation region

Electrical properties of thin film transistors with zinc tin oxide channel layer

Similar Documents

Recovery characteristics of solution-processed ZTO thin-film transistors

Effect of sulfur incorporation on solution-processed ZTO thin-film transistors

Charge transport at high temperatures in solution-processed zinc-tin-oxide thin-film transistors

Mechanical Stress Stability of Flexible Amorphous Zinc Tin Oxide Thin-Film Transistors

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

Effect of the interlayer for source-drain electrodes on a solution-processed zinc-tin-oxide TFT

Performance enhancement of fully transparent tin-doped zinc oxide thin-film transistors fabricated by sputtering at low temperature

Inkjet-printed zinc-tin-oxide TFTs with a solution-processed hybrid dielectric layer

A study on the high temperature-dependence of the electrical properties in a solution-deposited zinc-tin-oxide thin-film transistor operated in the saturation region

Electrical properties of thin film transistors with zinc tin oxide channel layer