NDLI: Synthesis and influence of annealing atmosphere on the luminescence properties of ZnGa$_{2}$O$

Content Provider	Springer Nature Link
Author	Kim, Hyunsu An, Soyeon Lee, Chongmu Park, Sunghoon
Copyright Year	2013
Abstract	ZnGa$_{2}$O$_{4}$ nanowires were synthesized on Si substrates by using the thermal evaporation of a mixture of Zn and GaN powders. Scanning electron microscopy showed that the diameters and the lengths of the nanowires ranged from a few tens to a few hundreds of nanometers and up to a few hundreds of micrometers, respectively. The ZnGa$_{2}$O$_{4}$ nanowires were found to have a face-centered cubic-structured monocrystalline phase. The photoluminescence properties of the ZnGa$_{2}$O$_{4}$ nanowires appeared to depend strongly on the annealing atmosphere. The ZnGa$_{2}$O$_{4}$ nanowires annealed in a hydrogen atmosphere showed a relatively weak broad visible emission band, ranging from 500 to 700 nm. In contrast, the ZnGa$_{2}$O$_{4}$ nanowires annealed in an oxygen atmosphere showed a relatively strong near-ultraviolet emission band centered at approximately 380 nm. On the other hand, the ZnGa$_{2}$O$_{4}$ nanowires annealed in an argon atmosphere showed a sharp, taller ultraviolet emission peak centered at approximately 380 nm, as well as a broad green emission band centered at approximately 510 nm. The origins of the enhanced luminescence in ZnGa$_{2}$O$_{4}$ nanowires due to annealing in different atmospheres are discussed.
Starting Page	2367
Ending Page	2370
Page Count	4
File Format	PDF
ISSN	03744884
Journal	Journal of the Korean Physical Society
Volume Number	63
Issue Number	12
e-ISSN	19768524
Language	English
Publisher	Springer Netherlands
Publisher Date	2013-12-29
Publisher Place	Dordrecht
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Annealing Theoretical, Mathematical and Computational Physics Photoluminescence ZnGa$_{2}$O$_{4}$ nanowires Physics Particle and Nuclear Physics
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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