NDLI: Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiO<sub>x</sub> films

Content Provider	IEEE Xplore Digital Library
Author	Chang-Kyu Lee Hong Yoon Jung Se Yeob Park Byeong Geun Son Chul-Kyu Lee Hyo Jin Kim Rino Choi Dae-Hwan Kim Jong-Uk Bae Woo-Sup Shin Jae Kyeong Jeong
Copyright Year	1980
Abstract	This letter examined the insertion effect of thermal TiO₂ films on the device performance and photo-bias instability of zinc tin oxide (ZTO) thin-film transistors (TFTs). A 5.0-nm-thick TiOx device inserted at the ZTO/silicon nitride (SiNx) interface exhibited slightly lower mobility (9.4 cm²/V·s ) compared with that (14.1 cm²/V·s ) of the reference device with a ZTO/SiNx stack. On the other hand, the negative gate-bias-illumination-stress-induced instability of the TiOx-inserted device was strongly suppressed from 11.0 V (reference device) to 3.0 V. This was attributed to the increase in valence band offset between TiOx and ZTO films, leading to the diminished injection of photo-induced hole carriers into the underlying SiNx bulk region.
Sponsorship	IEEE Electron Devices Society
Starting Page	253
Ending Page	255
Page Count	3
File Size	492425
File Format	PDF
ISSN	07413106
Volume Number	34
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thin film transistors Thermal stability Logic gates NIST Oxidation Zinc zinc tin oxide (ZTO) Photo-bias stability thermal oxidation thin-film transistors (TFTs) titanium oxide
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Improvement in the Photo-Bias Stability of Zinc Tin Oxide Thin-Film Transistors by Introducing a Thermal Oxidized ${rm TiO}_{2}$ Film as a Hole Carrier Blocking Layer

The Anomalous Effect of Oxygen Ratio on the Mobility and Photobias Stability of Sputtered Zinc–Tin–Oxide Transistors

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Suppression in negative bias illumination stress instability of zinc tin oxide transistor by insertion of thermal TiO_x films

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