NDLI: Impacts of NBTI/PBTI on power gated SRAM

Content Provider	Springer Nature Link
Author	Huang, Ping Xing, Zuo cheng
Copyright Year	2013
Abstract	A signal probability and activity probability (SPAP) model was proposed firstly, to estimate the impacts of the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) on power gated static random access memory (SRAM). The experiment results show that PBTI has significant influence on the read and write operations of SRAM with power gating, and it deteriorates the NBTI effects and results in a up to 39.38% static noise margin reduction and a 35.7% write margin degradation together with NBTI after 10$^{6}$ s working time. Then, a circuit level simulation was used to verify the assumption of the SPAP model, and finally the statistic data of CPU2000 benchmarks show that the proposed model has a reduction of 3.85% for estimation of the SNM degradation after 10$^{6}$ s working time compared with previous work.
Starting Page	1298
Ending Page	1306
Page Count	9
File Format	PDF
ISSN	20952899
Journal	Journal of Central South University of Technology
Volume Number	20
Issue Number	5
e-ISSN	22275223
Language	English
Publisher	Central South University
Publisher Date	2013-05-04
Publisher Place	Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	negative bias temperature instability (NBTI) positive bias temperature instability (PBTI) static random access memory (SRAM) power gating Engineering Metallic Materials
Content Type	Text
Resource Type	Article
Subject	Metals and Alloys Engineering

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