NDLI: Analysis of Stability Degradation of SRAMs Using a Physics-Based PBTI Model

Content Provider	IEEE Xplore Digital Library
Author	Chih-Hsiang Ho Hassan, M.K. Soo Youn Kim Roy, K.
Copyright Year	1980
Abstract	For the static random access memories (SRAMs) with high-k/metal gate transistors, positive bias temperature instability (PBTI)-induced stability degradation can be significant. In this letter, we analyze the temporal variations of the READ/WRITE operations and static noise margin of a conventional 6T-SRAM cell using a physics-based PBTI model. We show that the dependence of BTI effects on intrinsic variations and the design parameters of SRAM are significant A 10 mV increase in intrinsic variations can lead to double the BTI-induced read failure rate. Furthermore, SRAM is more sensitive to PBTI effects as compared with negative bias temperature instability These results validate that stochastic modeling of PBTI is required for reliable SRAM design.
Sponsorship	IEEE Electron Devices Society
Starting Page	951
Ending Page	953
Page Count	3
File Size	732301
File Format	PDF
ISSN	07413106
Volume Number	35
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2014-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Random access memory Stability analysis MOSFET circuits Thermal stability Logic gates Transistors static noise margin (SNM) Static random access memory (SRAM) positive bias temperature instability (PBTI) negative bias temperature instability (NBTI)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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