NDLI: Plasma-chemical treatment effect observed during the fabrication of AlGaN/GaN devices

Content Provider	Springer Nature Link
Author	Enisherlova, K. L. Kulikauskas, V. S. Seidman, L. A. Pishchagin, V. V. Kovalov, A. M. Korneev, V. I.
Copyright Year	2015
Abstract	The results obtained when AlGaN/GaN heterostructure surfaces with undoped i-AlGaN and i-GaN upper layers are treated by two types of oxygen plasma created in a two-electrode medium-frequency diode assembly and an electrodeless high-frequency (HF) system and irradiated with an argon ion beam are analyzed. The studies are performed using Rutherford backscattering spectroscopy, and changes in the structural parameters are estimated by means of the HF capacitance-voltage characteristic method. It is demonstrated that nanoregions (10–20 Å) of the initial i-AlGaN and i-GaN surface layers have different degrees of crystalline-structure ordering, in particular, i-AlGaN layers, which contain a large number of displaced Ga and Al atoms and, what is most important, nitrogen and oxygen atoms. This leads to an increase in the concentration of donor-like surface traps. A purely chemical interaction between ions and the surface can occur depending on the oxygen-plasma treatment modes; moreover, the chemical cleaning process can be accompanied by the impact action of ions on the surface. It is shown that structures with dissimilar surface layers respond differently to plasma treatment. The greatest change in the state of surface nanolayers is observed upon argon-ion bombardment. The analyzed electrical characteristics of test samples indicate that argon-ion treatment performed immediately before metallization makes it possible to create lower-resistance ohmic contacts and Schottky barriers with the smallest leakage currents.
Starting Page	684
Ending Page	693
Page Count	10
File Format	PDF
ISSN	10274510
Journal	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
Volume Number	9
Issue Number	4
e-ISSN	18197094
Language	English
Publisher	Pleiades Publishing
Publisher Date	2015-08-06
Publisher Place	Moscow
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	plasma-chemical treatment Rutherford backscattering AlGaN/GaN heterostructures oxygen plasma argon-ion beams C-V characteristics surface states Surfaces and Interfaces, Thin Films
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Surfaces, Coatings and Films

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