NDLI: AlGaN/GaN heterostructure study using Rutherford backscattering spectrometry

Content Provider	Springer Nature Link
Author	Enisherlova, K. L. Kulikauskas, V. S. Zatekin, V. V. Rusak, T. F. Gladysheva, N. B. Razgulyaev, I. I.
Copyright Year	2011
Abstract	Rutherford backscattering spectroscopy (RBS) was used to study the structural peculiarities and the presence of the background impurities in AlGaN/GaN heterostructures grown on substrates from different materials (α-Al$_{2}$O$_{3}$, SiC, and Si) by means of gas-phase epitaxy from the metal-organic compounds and molecular-beam epitaxy. Redistribution of the elements in the working layers of these heterostructures during formation of the ohmic contacts was analyzed. These studies confirmed the informativity of the applied method for revealing the peculiarities of stoichiometry of heterostructures with submicron and nanoscale layers. Oxygen was found to be a background impurity in heterostructures grown on sapphire substrates. It was not detected, however, in heterostructures grown on substrates of other materials. Intermixing of the working layers of heterostructures was observed in the process of the Ohmic contact formation. The local intermetallic phases of compounds of the sputtered metals in the selected modes were revealed after annealing at T = 650–700°C.
Starting Page	626
Ending Page	635
Page Count	10
File Format	PDF
ISSN	10274510
Journal	Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
Volume Number	5
Issue Number	4
e-ISSN	18197094
Language	English
Publisher	SP MAIK Nauka/Interperiodica
Publisher Date	2011-08-06
Publisher Place	Dordrecht
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Surfaces and Interfaces, Thin Films
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Surfaces, Coatings and Films

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