NDLI: Spectroscopic and Photoluminescent Properties of Indium Zinc Oxide (IZO) and IZO/Ag/IZO Sandwiched Film

Content Provider	Springer Nature Link
Author	Yame, Kazuki Kiba, Takayuki Kawamura, Midori Abe, Yoshio Kim, Kyung Ho Takayama, Junichi Murayama, Akihiro
Copyright Year	2017
Abstract	We report the ellipsometric and photoluminescence (PL) properties of Indium zinc oxide (IZO) films, which were grown by radio frequency sputtering under Ar and O$_{2}$ atmospheres. IZO films grown under an O$_{2}$ atmosphere (IZO (O$_{2}$)) showed enhanced PL properties when compared to the films grown under an Ar atmosphere (IZO (Ar)), particularly with respect to the band-edge emission. The enhancement of band-edge emission can be attributed to the reduction in the non-emissive defect states related to oxygen vacancies, which were repaired by sputtering under O$_{2}$ atmosphere, whereas the PL enhancement in green region is probably due to the formation of the different types of defects under the excess oxygen environment. This was also supported by the results of time-resolved PL measurements, where the band-edge emission of IZO (Ar) showed rapid decay with a 50 ps lifetime, which indicates the dominance of the relaxation pathway to underlying defect states. In contrast, the PL decay profiles of IZO (O$_{2}$) for band-edge and emissive defect states showed moderate decay with time-constants of 2.3 ns and 5.7 ns, respectively. The exciton relaxation dynamics were sensitive to the presence and its kinds of defect states, which were controlled by the growth conditions.
Starting Page	3873
Ending Page	3879
Page Count	7
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	46
Issue Number	7
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2017-04-06
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Photoluminescence transparent electrode time-resolved spectroscopy silver thin-film surface plasmon Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Highly Conducting Transparent Indium-Doped Zinc Oxide Thin Films

Electron Transport Layer-Free Inverted Organic Solar Cells Fabricated with Highly Transparent Low-Resistance Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Electrode

Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors

Engineering of Flexo- and Gravure-Printed Indium–Zinc-Oxide Semiconductor Layers for High-Performance Thin-Film Transistors

High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method

Solution-Processed Indium–Zinc-Oxide Thin Film Transistors With High- $k$ Magnesium Titanium Oxide Dielectric

The Study for Solution-Processed Alkali Metal-Doped Indium–Zinc Oxide Thin-Film Transistors

Intrinsic and Doped Zinc Oxide Nanowires for Transparent Electrode Fabrication via Low-Temperature Solution Synthesis

High-Mobility Solution-Processed Amorphous Indium Zinc $hbox{Oxide/In}_{2}hbox{O}_{3}$ Nanocrystal Hybrid Thin-Film Transistor

Spectroscopic and Photoluminescent Properties of Indium Zinc Oxide (IZO) and IZO/Ag/IZO Sandwiched Film

Similar Documents

Highly Conducting Transparent Indium-Doped Zinc Oxide Thin Films

Electron Transport Layer-Free Inverted Organic Solar Cells Fabricated with Highly Transparent Low-Resistance Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Electrode

Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors

Engineering of Flexo- and Gravure-Printed Indium–Zinc-Oxide Semiconductor Layers for High-Performance Thin-Film Transistors

High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method

Solution-Processed Indium–Zinc-Oxide Thin Film Transistors With High- $k$ Magnesium Titanium Oxide Dielectric

The Study for Solution-Processed Alkali Metal-Doped Indium–Zinc Oxide Thin-Film Transistors

Intrinsic and Doped Zinc Oxide Nanowires for Transparent Electrode Fabrication via Low-Temperature Solution Synthesis

High-Mobility Solution-Processed Amorphous Indium Zinc $hbox{Oxide/In}_{2}hbox{O}_{3}$ Nanocrystal Hybrid Thin-Film Transistor

Spectroscopic and Photoluminescent Properties of Indium Zinc Oxide (IZO) and IZO/Ag/IZO Sandwiched Film