NDLI: Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors

Content Provider	Springer Nature Link
Author	Li, Xifeng Li, Qian Xin, Enlong Zhang, Jianhua
Copyright Year	2012
Abstract	Indium–zinc oxide (IZO) thin films were fabricated by spin coating using acetate- and nitrate-based precursors, and thin film transistors (TFTs) were further fabricated employing the IZO films as the active channel layer. The impact of the indium concentration on the properties of the solutions, the structure and optical transmittance properties of the IZO films and the IZO TFTs device properties were researched in this article. The IZO films with amorphous structure were obtained when the annealing temperature is 500 °C. The transmittance could reach ~90 % (including glass substrate) during the visible region of 400–760 nm. Higher indium concentration can improve the IZO TFTs’ filed effect mobility. A I$_{on}$–I$_{off}$ of 6.0 × 10$^{6}$ and a mobility of 0.13 cm$^{2}$/Vs were obtained when the indium concentration is 60 %. IZO TFTs’ performance could deteriorate when the indium concentration more than 60 %.
Starting Page	130
Ending Page	134
Page Count	5
File Format	PDF
ISSN	09280707
Journal	Journal of Sol-Gel Science and Technology
Volume Number	65
Issue Number	2
e-ISSN	15734846
Language	English
Publisher	Springer US
Publisher Date	2012-11-21
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Indium–zinc oxide (IZO) Solution process Thin film transistors Transmittance Ceramics, Glass, Composites, Natural Methods Inorganic Chemistry Optical and Electronic Materials Nanotechnology
Content Type	Text
Resource Type	Article
Subject	Ceramics and Composites Chemistry Materials Chemistry Biomaterials Condensed Matter Physics Electronic, Optical and Magnetic Materials

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