NDLI: Hydrogen Gas Sensing Characteristics of Nanostructured NiO Thin Films Synthesized by SILAR Method

Content Provider	Springer Nature Link
Author	Karaduman, Irmak Çorlu, Tugba Yıldırım, M. Ali Ateş, Aytunç Acar, Selim
Copyright Year	2017
Abstract	Nanostructured NiO thin films have been synthesized by a facile, low-cost successive ionic layer adsorption and reaction (SILAR) method, and the effects of the film thickness on their hydrogen gas sensing properties investigated. The samples were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD) analysis, and energy-dispersive x-ray analysis. The XRD results revealed that the crystallinity improved with increasing thickness, exhibiting polycrystalline structure. SEM studies showed that all the films covered the glass substrate well. According to optical absorption measurements, the optical bandgap decreased with increasing film thickness. The gas sensing properties of the nanostructured NiO thin films were studied as a function of operating temperature and gas concentration. The samples showed good sensing performance of H$_{2}$ gas with high response. The maximum response was 75% at operating temperature of 200°C for hydrogen gas concentration of 40 ppm. These results demonstrate that nanostructured NiO thin films synthesized by the SILAR method have potential for application in hydrogen detection.
Starting Page	4017
Ending Page	4023
Page Count	7
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	46
Issue Number	7
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2017-03-10
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Gas sensors NiO hydrogen SILAR Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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