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| Content Provider | Springer Nature Link |
|---|---|
| Author | Lee, Hyo Jong Han, Heung Nam Lee, Dong Nyung |
| Copyright Year | 2005 |
| Abstract | The annealing textures of copper interconnects depend upon their deposition textures and geometries. The copper interconnects are subjected to tensile stresses even at room temperature, which in turn gives rise to strain energies. The stress distributions in interconnects are not homogeneous due to trenches, resulting in non-fiber-type textures after annealing. To better understand the formation of the non-fiber-type textures, the textures of specimens of 0.2–6 µm in trench width with 0.2 µm in space were measured, and the strain energy and stress distributions have been simulated. The simulation results indicate that strain energy density is highest at the upper corners of trench. Therefore, the grain growth rate at the upper corners is fastest, resulting in the {111}〈110〉 annealing texture. As the trench width increases, the influence of stresses in the trench increases, even though the strain energy density in the trench is relatively low. In this case the {111}〈112〉 component increases, even though the formation of the {111}〈110〉 orientation cannot be excluded. |
| Starting Page | 1493 |
| Ending Page | 1499 |
| Page Count | 7 |
| File Format | |
| ISSN | 03615235 |
| Journal | Journal of Electronic Materials |
| Volume Number | 34 |
| Issue Number | 12 |
| e-ISSN | 1543186X |
| Language | English |
| Publisher | Springer-Verlag |
| Publisher Date | 2005-01-01 |
| Publisher Place | New York |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Texture annealing copper interconnects nanostructures Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
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