NDLI: Texture investigation of copper interconnects with a different line width

Content Provider	Springer Nature Link
Author	Cho, J. Y. Mirpuri, K. Lee, D. N. An, J. K. Szpunar, J. A.
Copyright Year	2005
Abstract	To understand the effect of line width on textural and microstructural evolution of Cu damascene interconnect, three Cu interconnects samples with different line widths are investigated. According to x-ray diffraction (XRD) results, the (111) texture is developed in all investigated lines. Scattered {111}〈112〉 and {111}〈110〉 texture components are present in 0.18-µm-width interconnect lines, and the {111}〈110〉 texture was developed in 2-µm-width interconnect lines. The directional changes of the (111) plane orientation with increased line width were investigated by XRD. In addition, microstructure and grain-boundary character distribution (GBCD) of Cu interconnect were measured using electron backscattered diffraction (EBSD) techniques. This measurement demonstrated that a bamboo-like microstructure is developed in the narrow line, and a polygranular structure is developed in the wider line. The fraction of ∑3 boundaries is increased as the line width increases but is decreased in the blanket film. A new interpretation of textural evolution in damascene interconnect lines after annealing is suggested, based on the state of stress and growth mechanisms of Cu deposits.
Starting Page	53
Ending Page	61
Page Count	9
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	34
Issue Number	1
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	2005-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Cu interconnects damascene texture stress orientation imaging microscope (OIM) Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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