NDLI: Pulsed Laser Deposition of Bismuth Telluride Thin Films for Microelectromechanical Systems Thermoelectric Energy Harvesters

Content Provider	Springer Nature Link
Author	Abdel Aziz, Ahmed Elsayed, Mohannad Abu Bakr, Hassan El Rifai, Joumana Donck, Tom Celis, Jean Pierre Leov, Vladimir Fiorini, Paolo Sedky, Sherif
Copyright Year	2010
Abstract	This article reports on the development of thin films of p- and n-type bismuth telluride compounds which are suitable for microelectromechanical systems (MEMS) thermoelectric energy harvesters. Films were prepared by the pulsed laser deposition technique. It is shown that the thin films of binary Bi-Te alloys outperformed considerably their ternary counterparts. Furthermore, the highest thermoelectric figure of merit (ZT) was found to be 0.39 for the p-type Bi$_{32}$Te$_{68}$ alloy, whereas the optimal n-type alloy was Bi$_{25}$Te$_{75}$, which was characterized by a relatively low stress gradient.
Starting Page	1920
Ending Page	1925
Page Count	6
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	39
Issue Number	9
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2010-01-07
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Pulsed laser deposition (PLD) bismuth telluride (Bi-Te) thermoelectric energy harvesters Solid State Physics Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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