NDLI: A Study of Phonon Transport in Si/Ge Superlattice Thin Films Using a Fast MC Solver

Content Provider	Springer Nature Link
Author	Huang, Mei Jiau Tsai, Tung Chun Liu, Liang Chun
Copyright Year	2010
Abstract	We employ a fast Monte Carlo solver, which takes advantage of the geometric symmetry existent in the system to reduce the computational effort, to investigate the phonon transport phenomena in the cross-plane and in-plane directions of Si/Ge superlattice thin films. The simulation results show that the heterogeneous interfaces perpendicular to the heat flow direction create a much stronger thermal resistance than the parallel ones. The cross-plane and in-plane thermal conductivities of a Si/Ge superlattice thin film increase monotonically with the smoothness of the interfaces and the superlattice period. Most of all, a minimum of the in-plane thermal conductivity is observed as the ratio of the layer thicknesses is varied for fixed period. This is due to the effective layer thermal conductivities being determined not only by the phonon intrinsic properties but also by the strong interface scattering. A detailed examination shows that the minimum appears when the effective layer thermal conductivities of the Si and Ge layers are about the same.
Starting Page	1875
Ending Page	1879
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	39
Issue Number	9
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2010-01-20
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Phonon transport superlattice thin films Monte Carlo Solid State Physics Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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