NDLI: Preparation and Thermoelectric Properties of Doped Bi$_{2}$Te$_{3}$-Bi$_{2}$Se$

Content Provider	Springer Nature Link
Author	Lee, Go Eun Kim, Il Ho Lim, Young Soo Seo, Won Seon Choi, Byeong Jun Hwang, Chang Won
Copyright Year	2013
Abstract	Since Bi$_{2}$Te$_{3}$ and Bi$_{2}$Se$_{3}$ have the same crystal structure, they form a homogeneous solid solution. Therefore, the thermal conductivity of the solid solution can be reduced by phonon scattering. The thermoelectric figure of merit can be improved by controlling the carrier concentration through doping. In this study, Bi$_{2}$Te$_{2.85}$Se$_{0.15}$:D$_{ m }$ (D: dopants such as I, Cu, Ag, Ni, Zn) solid solutions were prepared by encapsulated melting and hot pressing. All specimens exhibited n-type conduction in the measured temperature range (323 K to 523 K), and their electrical conductivities decreased slightly with increasing temperature. The undoped solid solution showed a carrier concentration of 7.37 × 10$^{19}$ cm$^{−3}$, power factor of 2.1 mW m$^{−1}$ K$^{−1}$, and figure of merit of 0.56 at 323 K. The figure of merit (ZT) was improved due to the increased power factor by I, Cu, and Ag dopings, and maximum ZT values were obtained as 0.76 at 323 K for Bi$_{2}$Te$_{2.85}$Se$_{0.15}$:Cu$_{0.01}$ and 0.90 at 423 K for Bi$_{2}$Te$_{2.85}$Se$_{0.15}$:I$_{0.005}$. However, the thermoelectric properties of Ni- and Zn-doped solid solutions were not enhanced.
Starting Page	1650
Ending Page	1655
Page Count	6
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	43
Issue Number	6
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2013-10-29
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Thermoelectric bismuth telluride solid solution Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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