NDLI: Achieving near-unity absorption in planar semiconductor film on metal substrate

Content Provider	Springer Nature Link
Author	Rao, Lei Li, Ming
Copyright Year	2016
Abstract	We theoretically studied a three-layer configuration composed of a semiconductor layer sandwiched between air and metal substrate. Using full-field calculations, it is shown that near-zero reflectivity and near-unity absorptivity occur at the same wavelength of 532 nm in a 12 nm thick a-Si on Ag substrate. The behind physical origin is that the reflection on the a-Si/Ag interface is modulated both on amplitude and phase by the thickness of a-Si, which can cancel out the reflection on the air/a-Si interface by suitable thickness choice. The polar diagrams and absorption spectra prove that near-unity absorption at any target wavelength and high absorption at wide wavelength range can be achieved by selecting appropriate semiconductor and metal substrate. Two application scenarios in photo-absorber and solar cell fields are proposed in the end. The devised concept can extremely save the raw materials (total thickness around 100 nm) and realize the component functionalities. Our findings serve as a guide for designing planar perfect absorbers for potential optical absorber and photovoltaic applications.
Starting Page	1
Ending Page	12
Page Count	12
File Format	PDF
ISSN	03068919
Journal	Optical and Quantum Electronics
Volume Number	49
Issue Number	1
e-ISSN	1572817X
Language	English
Publisher	Springer US
Publisher Date	2016-12-10
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Reflection Absorption Semiconductor Photovoltaics Optics, Lasers, Photonics, Optical Devices Electrical Engineering Characterization and Evaluation of Materials Computer Communication Networks
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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