NDLI: Theoretical utmost performance of (100) mid-wave HgCdTe photodetectors

Content Provider	Springer Nature Link
Author	Martyniuk, P. Gawron, W. Madejczyk, P. Kopytko, M. Grodecki, K. Gomułka, E.
Copyright Year	2016
Abstract	HgCdTe detectors designed to detect mid-wavelength (3–5 μm) infrared radiation must be cooled to reach the required performance. The cooling requirement makes the sensor system both expensive and bulky and the fundamental goal is to reach higher operating temperature condition preserving near background limited performance with high detectivity and high speed response at the same time. In order to reach higher operating temperature condition the thermal generation rate must to be suppressed under the photon generation rate. Except Auger 7 generation-recombination process, p-type HgCdTe is mostly limited by technology dependent Shockley-Read-Hall generation-recombination mechanism. One of the ways to reduce the trap density is a growth of the (100) HgCdTe on GaAs substrates. That orientation allows reaching lower carrier concentration ~5 × 10$^{14}$ cm$^{−3}$ in comparison to the commonly used (111) orientation ~5 × 10$^{15}$ cm$^{−3}$ in mid-wavelength infrared range. In addition, it was presented that Shockley-Read-Hall traps density could be reduced to the level of ~4.4 × 10$^{8}$ cm$^{−3}$. The theoretical simulations related to the utmost performance of the (100) HgCdTe Auger suppressed structures are presented. Dark current is reported to be reduced by more than one order of magnitude within the range ~6 × 10$^{−2}$–3 × 10$^{−3}$ A/cm$^{2}$. Detectivity increases within range ~3–12 × 10$^{11}$ cm Hz$^{1/2}$/W (wavelength ~5 μm) at temperature 200 K and voltage 200 mV.
Starting Page	1
Ending Page	8
Page Count	8
File Format	PDF
ISSN	03068919
Journal	Optical and Quantum Electronics
Volume Number	49
Issue Number	1
e-ISSN	1572817X
Language	English
Publisher	Springer US
Publisher Date	2016-12-29
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	(100) HgCdTe orientation MWIR HOT Optics, Lasers, Photonics, Optical Devices Electrical Engineering Characterization and Evaluation of Materials Computer Communication Networks
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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