NDLI: The Bipolar Resistive Switching in BiFeO$

Content Provider	Springer Nature Link
Author	Xu, Qingyu Yuan, Xueyong Xu, Mingxiang
Copyright Year	2011
Abstract	Pure-phase polycrystalline BiFeO$_{3}$ films have been successfully prepared by pulsed-laser deposition on surface oxidized Si substrates using LaNiO$_{3}$ buffer layer with substrate temperature (T $_{s}$) ranging from 550 °C to 800 °C and a laser frequency of 5 Hz and 10 Hz. Bipolar resistive switching has been observed in all the films using LaNiO$_{3}$ as bottom electrodes and silver glue dots as top electrodes, the resistivity switches from a high-resistance state (HRS) to a low-resistance state (LRS) with positive voltage applied on the top Ag electrodes, and from LRS to HRS with positive voltage applied on the bottom LaNiO$_{3}$ electrodes. The mechanism of the resistive switching has been confirmed to be due to the voltage polarity dependent formation/rupture of the conducting filaments formed by the O vacancies. The highest resistive ratio of HRS to LRS, of more than 2 orders of magnitude, has been achieved in the highest resistive BiFeO$_{3}$ film prepared at T $_{s}$ of 650 °C and laser frequency of 10 Hz.
Starting Page	1139
Ending Page	1144
Page Count	6
File Format	PDF
ISSN	15571939
Journal	Journal of Superconductivity and Novel Magnetism
Volume Number	25
Issue Number	4
e-ISSN	15571947
Language	English
Publisher	Springer US
Publisher Date	2011-12-21
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Multiferroic Resistive switching Defects Characterization and Evaluation of Materials Magnetism, Magnetic Materials Strongly Correlated Systems, Superconductivity Condensed Matter Physics
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Condensed Matter Physics

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