NDLI: Photoluminescence study of strain-induced GaInNAs/GaAs quantum dots

Content Provider	Springer Nature Link
Author	Koskenvaara, H. Hakkarainen, T. Lipsanen, H. Sopanen, M.
Copyright Year	2003
Abstract	Strain-induced Ga$_{0.8}$In$_{0.2}$N$_{ y }$As$_{1−y }$ quantum dots on GaAs were fabricated by metal organic vapor phase epitaxy. Nitrogen concentration y was varied between 0% and 1.3%. The effect of nitrogen concentration on the optical properties of the quantum dots was investigated by continuous-wave and time-resolved photoluminescence measurements. Carrier localization in the states below the band edge of the nitrogen-containing quantum well has been observed. These states are thought to originate from the variation of the quantum well width or from the fluctuation of the composition. Such variations have been identified in GaInNAs quantum wells on GaAs without stressor islands. The measured energy difference of the quantum well and quantum dot ground-state peak energies increase with increasing temperature.
Starting Page	357
Ending Page	360
Page Count	4
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	14
Issue Number	5-7
e-ISSN	1573482X
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2003-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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