NDLI: A batch process to deposit amorphous metallic Mo–Si

Content Provider	Springer Nature Link
Author	Kattelus, H. Heikkinen, H. Häärä, A. Ylönen, M. Tolkki, A.
Copyright Year	2003
Abstract	A process for depositing amorphous electrically conducting Mo–Si–N films in a batch-type reactive sputtering system has been developed. Each elemental constituent in the film is individually adjustable: molybdenum and silicon through the electrical power applied to the separate targets, and nitrogen through the gas flow rate. Argon is used for the tuning of the intrinsic stress. The amorphous structure of a Mo$_{31}$Si$_{18}$N$_{45}$ film is confirmed by cross-sectional transmission electron microscopy and electron diffraction. The structure remains unchanged up to at least 700 °C for 1 min of annealing in an argon ambient. In the process, the room-temperature resistivity decreases from an initial value of about 1.1 to about 1.0 mΩ cm with no change in the film thickness. After 1100 °C for one minute, grains nucleate and the film resistivity falls by two-thirds. The intrinsic stress in Mo–Si–N films is significantly more uniform throughout the film area than in polycrystalline molybdenum films. These results hold promise for applications of Mo–Si–N films in micromechanical devices. Self-supported beams and membranes have been successfully delaminated from their silicon substrates; molybdenum-rich films are more ductile than silicon-rich films.
Starting Page	427
Ending Page	430
Page Count	4
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	14
Issue Number	5-7
e-ISSN	1573482X
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2003-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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