NDLI: Piezoelectric ZnO films by r.f. sputtering

Content Provider	Springer Nature Link
Author	Molarius, J. Kaitila, J. Pensala, T. Ylilammi, M.
Copyright Year	2003
Abstract	Piezoelectric zinc oxide films are used in microelectromechanical systems (MEMS) applications, where they can be used in sensors to detect, e.g., pressure or acceleration. Beside sensors, ZnO films are applied in activation devices, where force is needed. Conductive-doped zinc oxide (most often with aluminum) is also used in optoelectronics. Piezoelectric films including AlN and ZnO are more difficult to produce than the corresponding conductive materials. In order to achieve good piezoelectricity in ZnO films, they have to possess high purity, a (0 0 1) orientation (ZnO has hexagonal crystal structure), high resistivity, and fine columnar microstructure perpendicular to the substrate. We have used r.f. magnetron (13.56 MHz) sputtering from a ZnO target in an oxygen atmosphere to achieve the piezoelectric ZnO. The aim of this work has been to develop an r.f. sputtering process for ZnO to achieve highly piezoelectric thin films. As a test vehicle to measure the piezoelectricity of the ZnO films we have fabricated resonators and passband filters in the 1–2 GHz range using standard microelectronics photolithography, deposition, and etching techniques on 100-mm diameter Corning glass or silicon wafers. The influence of the sputtering-process parameters on the film properties has been studied by X-ray diffraction, scanning electron microscopy, atomic force microscopy, and electrical measurements. In this study, the effects of the process parameters on the final material properties of the ZnO film are discussed in detail.
Starting Page	431
Ending Page	435
Page Count	5
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	14
Issue Number	5-7
e-ISSN	1573482X
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2003-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Fabrication of highly c-axis textured ZnO thin films piezoelectric transducers by RF sputtering

Structural properties of TiO$_{2}$–WO$_{3}$ thin films prepared by r.f. sputtering

Properties of r.f. sputtered cadmium telluride thin films

Optical characterization of ZnO

Origin of (103) plane of ZnO films deposited by RF magnetron sputtering

P-type ZnO films deposited by DC reactive magnetron sputtering using codoping process

Thickness dependence of properties Ga-doped ZnO thin films deposited by magnetron sputtering

Stress dependent properties of Ga-doped ZnO thin films prepared by magnetron sputtering

Effect of oxygen to argon ratio on the properties of thin SiO$_{x}$ films deposited by r.f. sputtering

Piezoelectric ZnO films by r.f. sputtering

Similar Documents

Fabrication of highly c-axis textured ZnO thin films piezoelectric transducers by RF sputtering

Structural properties of TiO$_{2}$–WO$_{3}$ thin films prepared by r.f. sputtering

Properties of r.f. sputtered cadmium telluride thin films

Optical characterization of ZnO

Origin of (103) plane of ZnO films deposited by RF magnetron sputtering

P-type ZnO films deposited by DC reactive magnetron sputtering using codoping process

Thickness dependence of properties Ga-doped ZnO thin films deposited by magnetron sputtering

Stress dependent properties of Ga-doped ZnO thin films prepared by magnetron sputtering

Effect of oxygen to argon ratio on the properties of thin SiO$_{x}$ films deposited by r.f. sputtering

Piezoelectric ZnO films by r.f. sputtering