NDLI: Diffusion profiles and magnetic properties of Mn-implanted silicon after thermal annealing

Content Provider	Springer Nature Link
Author	Chow, Lee Gonzalez, J. C. Barco, E. Vanfleet, R. Misiuk, A. Prujszczyk, M. Shunmugavelu, A. Chai, G. Bak Misiuk, J.
Copyright Year	2007
Abstract	Re-distribution of Mn atoms implanted into Czochralski silicon (CzSi:Mn) and floating zone silicon (FzSi:MN) after thermal annealing between 300 and 1,000 °C have been investigated by secondary ion mass spectroscopic technique. The motivation behind our study comes from recent report of strong magnetic ordering up to 400 K of Mn implanted silicon samples reported by Bolduc et al. (Phys Rev B 71:033302, 2005). Our silicon substrates were implanted with 160 keV Mn$^{+}$ ion to a dose of 1 × 10$^{16}$ cm$^{−2}$ at either room temperature or at 340 °C. The Mn profiles after annealing above 900 °C showed multiple concentration peaks for the 340 °C implanted samples, but not for the samples implanted at room temperature. We also carried out cross sectional TEM and ferromagnetic resonance measurements to correlate the micro-structural and magnetization data with the Mn depth profile obtained by SIMS.
Starting Page	263
Ending Page	268
Page Count	6
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	19
Issue Number	1
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2007-11-27
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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