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  1. Journal of Materials Science: Materials in Electronics
  2. Journal of Materials Science: Materials in Electronics : Volume 19
  3. Journal of Materials Science: Materials in Electronics : Volume 19, Issue 1, Supplement,December 2008
  4. Irradiation effects on AlGaN HFET devices and GaN layers
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Journal of Materials Science: Materials in Electronics : Volume 28
Journal of Materials Science: Materials in Electronics : Volume 27
Journal of Materials Science: Materials in Electronics : Volume 26
Journal of Materials Science: Materials in Electronics : Volume 25
Journal of Materials Science: Materials in Electronics : Volume 24
Journal of Materials Science: Materials in Electronics : Volume 23
Journal of Materials Science: Materials in Electronics : Volume 22
Journal of Materials Science: Materials in Electronics : Volume 21
Journal of Materials Science: Materials in Electronics : Volume 20
Journal of Materials Science: Materials in Electronics : Volume 19
Journal of Materials Science: Materials in Electronics : Volume 19, Issue 12, December 2008
Journal of Materials Science: Materials in Electronics : Volume 19, Issue 1, Supplement,December 2008
DRIP-XII Conference 2007
Correlation between spatially resolved solar cell efficiency and carrier lifetime of multicrystalline silicon
Infrared light emission from porous silicon
Lithium-drifted, silicon radiation detectors for harsh radiation environments
Vacancies in as-grown CZ silicon crystals observed by low-temperature ultrasonic measurements
On the characterisation of grown-in defects in Czochralski-grown Si and Ge
Effect of point defects on the recombination activity of copper precipitates in p-type Czochralski silicon
Radially non-uniform interaction of nitrogen with silicon wafers
Gettering of iron in silicon by boron implantation
Microstructure of a-plane ( $$2\bar{1}\bar{1}0$$ ) GaN ELOG stripe patterns with different in-plane orientation
Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering
Cathodoluminescence study of GaN-based film structures
Irradiation effects on AlGaN HFET devices and GaN layers
Study of in-depth strain variation in ion-irradiated GaN
Band offset diagnostics of advanced dielectrics
Interpretation of lifetime and defect spectroscopy measurements by generalized rate equations
Photoelastic strain measurement in GaP (100) wafers under external stresses
Investigation of defects in polyhedral oligomeric silsesquioxanes based organic light emitting diodes
Effect of electrical operation on the defect states in organic semiconductors
Defects in nanostructures with ripened InAs/GaAs quantum dots
Thermal instability of electron traps in InAs/GaAs quantum dot structures
Detection of the interlayer at the GaAs-on-InGaP interface in MOVPE InGaP/GaAs by the dark field method
Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn)As nanostructures
Point defects in SiGe alloys: structural guessing based on electronic transition analysis
Evaluation of poly-Si thin film crystallized by solid green laser annealing using UV/visible Raman spectroscopy
Ultra high-speed characterization of multicrystalline Si wafers by photoluminescence imaging with HF immersion
Microscopic and spectroscopic mapping of dislocation-related photoluminescence in multicrystalline silicon wafers
Laser-induced defect creation in 300 mm SOI-wafer analyzed by use of photoelastic imaging
Study of the degradation of AlGaAs-based high-power laser bars: V defects
Identification of degradation mechanisms in high-power laser bars using by-emitter degradation studies
Thermal processes in high-power laser bars investigated by spatially resolved thermoreflectance
Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damage
Degradation model analysis of laser diodes
Spatial variations of carrier and defect concentration in VGF GaAs:Si
Introduction of defects during the dry etching of InP photonic structures: a cathodo-luminescence study
SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes
The evolution of the ion implantation damage in device processing
Characterization of strained Si wafers by X-ray diffraction techniques
Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy
In situ X-ray diffraction study of epitaxial growth of ordered Fe$_{3}$Si films
Influence of defects in opal photonic crystals on the optical transmission imaged by near-field scanning optical microscopy
The origin and reduction of dislocations in Gallium Nitride
Initial process effects on the surface morphology and structural property of the AlN epilayers
Electron-beam-induced current study of electrical activity of dislocations in 4H–SiC homoeptaxial film
High-resolution photoinduced transient spectroscopy of defect centers in vanadium-doped semi-insulating SiC
Electronic structures of ZnO(0001)-Zn and (000−1)-O polar surfaces
Evaluation of photoelectrical properties of Bi doped CdTe crystals
Study of nanopipes formed in silicon wafers using helium implantation by SEM, RBS and SIMS methods
Dislocation-related photoluminescence from processed Si
Numerical analysis of Double Gate and Gate All Around MOSFETs with bulk trap states
Structure properties of carbon implanted silicon layers
Diffusion profiles and magnetic properties of Mn-implanted silicon after thermal annealing
White beam topography of 300 mm Si wafers
Formation of insulating oxygen-containing layer on the silicon wafer surface using low-temperature hydrogenation
SEM–EBIC investigation of silicon, compensated by zinc during high temperature diffusion annealing
Characterization of a metastable defect labeled EM3 in hydrogen-implanted n-type silicon using deep-level transient spectroscopy
Optical characterisation of silicon nitride thin films grown by novel remote plasma sputter deposition
Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments
Raman scattering characterization of Ge-composition in bulk Si$_{1−x }$Ge$_{ x }$ with compositional variation
New method to control defect reaction induced by electron-hole recombination for long-living widegap light-emitting devices
Characterisation of cubic SiC layers VPE grown on Si substrates of different conductivity
Impact of electron beam irradiation on the cathodoluminescence intensity for ZnO and GaN
Correlation between the free carrier lifetime and total amount of deep centers in ZnO single crystals
Dynamical study of the radiative recombination processes in GaN/AlGaN QWs
Cathodoluminescent investigations of In$_{ x }$Ga$_{1−x }$N layers
EBIC imaging using scanning transmission electron microscopy: experiment and analysis
Explanation of positive and negative PICTS peaks in SI-GaAs
Study of Schottky diodes made on Mn doped p-type InP
Influence of doping on the reliability of AlGaInP LEDs
Analysis of dislocation cell patterns in as-grown compound materials (GaAs, CaF$_{2}$)
Statistical methods of determining the QD dimensions based on atomic force microscopy measurements
Omega-Scan: an X-ray tool for the characterization of crystal properties
Application of computational intelligence to analysis of PITS spectral images for defect centres in semi-insulating materials
Local cathodoluminescent study of the multilayers semiconductors nanostructures
The effects of oxygen vacancies on the electronic properties of V$_{2}$O$_{5−x }$
Investigation of defects in Cu(In,Ga)(S,Se)$_{2}$ films using the photocurrent decay technique
Point defect structure in CdTe and ZnTe thin films
Influence of plasma treatments on the microstructure and electrophysical properties of SnO$_{ x }$ thin films synthesized by magnetron sputtering and sol–gel technique
Journal of Materials Science: Materials in Electronics : Volume 19, Issue 11, November 2008
Journal of Materials Science: Materials in Electronics : Volume 19, Issue 10, October 2008
Journal of Materials Science: Materials in Electronics : Volume 19, Issue 8-9, September 2008
Journal of Materials Science: Materials in Electronics : Volume 19, Issue 7, July 2008
Journal of Materials Science: Materials in Electronics : Volume 19, Issue 6, June 2008
Journal of Materials Science: Materials in Electronics : Volume 19, Issue 5, May 2008
Journal of Materials Science: Materials in Electronics : Volume 19, Issue 4, April 2008
Journal of Materials Science: Materials in Electronics : Volume 19, Issue 3, March 2008
Journal of Materials Science: Materials in Electronics : Volume 19, Issue 2, February 2008
Journal of Materials Science: Materials in Electronics : Volume 19, Issue 1, January 2008
Journal of Materials Science: Materials in Electronics : Volume 18
Journal of Materials Science: Materials in Electronics : Volume 17
Journal of Materials Science: Materials in Electronics : Volume 16
Journal of Materials Science: Materials in Electronics : Volume 15
Journal of Materials Science: Materials in Electronics : Volume 14
Journal of Materials Science: Materials in Electronics : Volume 13
Journal of Materials Science: Materials in Electronics : Volume 12
Journal of Materials Science: Materials in Electronics : Volume 11
Journal of Materials Science: Materials in Electronics : Volume 10
Journal of Materials Science: Materials in Electronics : Volume 9
Journal of Materials Science: Materials in Electronics : Volume 8

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Irradiation effects on AlGaN HFET devices and GaN layers

Content Provider Springer Nature Link
Author Gnanapragasam, Sonia Richter, Eberhard Brunner, Frank Denker, Andrea Lossy, Richard Mai, Michael Lenk, Friedrich Opitz Coutureau, Jörg Pensl, Gerhard Schmidt, Jens Zeimer, Ute Wang, Liun Krishnan, Baskar Weyers, Markus Würfl, Jaochim Tränkle, Günther
Copyright Year 2008
Abstract AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with protons as well as carbon, oxygen, iron and krypton ions of high (68 and 120 MeV) and low (2 MeV) energy with fluences in the range from 1 × 10$^{7}$ to 1 × 10$^{13 }$cm$^{−2}$. High energy irradiation with protons, carbon and oxygen produced no degradation in devices while krypton irradiation at the fluence of 1 × 10$^{10}$ cm$^{−2}$ resulted in a small reduction of 2% in the transconductance. Similarly, for GaN samples irradiated with protons, carbon and oxygen at high energy no changes were seen by XRD, PL and Hall effect, while changes in lattice constant and a reduction in PL intensity were observed after irradiation with high energy krypton. Low energy irradiation with carbon and oxygen at a fluence of 5 × 10$^{10}$ cm$^{−2}$ results in small change in the device performance while remarkable changes in device characteristics are seen at a fluence of 1 × 10$^{12}$ cm$^{−2}$ for carbon, oxygen, iron and krypton irradiation. Similarly changes are also observed by XRD, PL and Hall effect for the thick GaN layer irradiated at the fluence of 1 × 10$^{12}$ cm$^{−2}$. The device results and GaN layer properties are strongly correlated.
Starting Page 64
Ending Page 67
Page Count 4
File Format PDF
ISSN 09574522
Journal Journal of Materials Science: Materials in Electronics
Volume Number 19
Issue Number 1
e-ISSN 1573482X
Language English
Publisher Springer US
Publisher Date 2008-02-05
Publisher Place Boston
Access Restriction One Nation One Subscription (ONOS)
Subject Keyword Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type Text
Resource Type Article
Subject Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering
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