NDLI: Polycrystalline silicon films fabricated by rapid thermal annealing

Content Provider	Springer Nature Link
Author	Zhang, Lei Shen, Honglie You, Jiayi Jiang, Feng Wu, Tianru Tang, Zhengxia
Copyright Year	2012
Abstract	Poly-crystalline silicon (poly-Si) films were fabricated by rapid thermal annealing (RTA) of amorphous silicon films which were deposited on quartz by hot wire chemical vapor deposition. An insertion of Cr layer can significantly suppress the peeling of Si films during the RTA process. The effect of RTA parameters on the structural properties of poly-Si films was investigated by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The results show that the crystallinity of the poly-Si films is increased with the increase of RTA temperature and duration. A sharp peak at about 520 cm$^{−1}$ is observed in the Raman spectra of poly-Si films annealed at 900 and 1,100 °C for 15 s indicating the excellent crystallinity of the poly-Si films fabricated by RTA. Poly-Si films with high crystalline fraction of 97.3 % were obtained by RTA at 1,100 °C for 20 s.
Starting Page	1279
Ending Page	1283
Page Count	5
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	23
Issue Number	7
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2012-06-15
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation of Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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