NDLI: Reactive metallic layers produced on AlN, Si$_{3}$N$

Content Provider	Springer Nature Link
Author	Olesińska, W. Pawłowska, M. Kaliński, D. Chmielewski, M.
Copyright Year	2004
Abstract	The paper presents the results of studies on the joining of non-oxide ceramics with copper with the use of intermediary metallic layers. AlN ceramics was covered with Mo, Mn, FeSi, Ti intermediary layers, Si$_{3}$N$_{4}$ ceramics – with Cu, Mn, Ti layers, and SiC ceramics – with Cr, TiCu layers. Although the individual metallic layers were synthesized under different conditions, all the structures contained barrier layers formed during the synthesis process. With the AlN and Si$_{3}$N$_{4}$ ceramics, the barrier layer was composed of TiN, which was well wetted by the metallic and oxide phases. With the SiC ceramics, the role of the barrier layer was played by the Ti$_{3}$SiC$_{2}$ phase. The thickness of the barrier layers of both types (TiN, Ti$_{3}$SiC) was about 1 μm. They were well wetted by the metallic solders, coherent with the ceramic surface, and, within the brazed multi-layer joints, they constituted a continuous microstructure.
Starting Page	813
Ending Page	817
Page Count	5
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	15
Issue Number	12
e-ISSN	1573482X
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2004-01-01
Publisher Place	Dordrecht
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Sublimation epitaxy of AlN layers on 4H-SiC depending on the type of crucible

Effect of NH$_{4}$F additive on purification of AlN ceramics

Characterisation of cubic SiC layers VPE grown on Si substrates of different conductivity

Dielectric properties of AlN film on Si substrate

Preparation and dielectric properties of Si$_{3}$N$_{4}$/SiCw composite ceramic

A batch process to deposit amorphous metallic Mo–Si–N films

Erratum to: Size-controlled Si quantum dots embedded in B-doped SiN$_{x}$/Si$_{3}$N$_{4}$ superlatice for Si quantum dot solar cells

Size-controlled Si quantum dots embedded in B-doped SiN$_{x}$/Si$_{3}$N$_{4}$ superlatice for Si quantum dot solar cells

Improvement microwave dielectric properties of Zn$_{2}$SnO$_{4}$ ceramics by substituting Sn$^{4+}$ with Si$^{4+}$

Reactive metallic layers produced on AlN, Si$_{3}$N$_{4}$ and SiC ceramics

Similar Documents

Sublimation epitaxy of AlN layers on 4H-SiC depending on the type of crucible

Effect of NH$_{4}$F additive on purification of AlN ceramics

Characterisation of cubic SiC layers VPE grown on Si substrates of different conductivity

Dielectric properties of AlN film on Si substrate

Preparation and dielectric properties of Si$_{3}$N$_{4}$/SiCw composite ceramic

A batch process to deposit amorphous metallic Mo–Si–N films

Erratum to: Size-controlled Si quantum dots embedded in B-doped SiN$_{x}$/Si$_{3}$N$_{4}$ superlatice for Si quantum dot solar cells

Size-controlled Si quantum dots embedded in B-doped SiN$_{x}$/Si$_{3}$N$_{4}$ superlatice for Si quantum dot solar cells

Improvement microwave dielectric properties of Zn$_{2}$SnO$_{4}$ ceramics by substituting Sn$^{4+}$ with Si$^{4+}$

Reactive metallic layers produced on AlN, Si$_{3}$N$_{4}$ and SiC ceramics