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| Content Provider | Springer Nature Link |
|---|---|
| Author | Shim, J. H. Cho, N. H. |
| Copyright Year | 2006 |
| Abstract | A 30-nm-thick Ni layer was deposited on top of the nc-Si:H (hydrogenated nanocrystalline Si) films by rf-magnetron sputter, and then heat-treatments were carried out at temperatures of 350–500$^{∘}$C. Si nanocrystallites were formed in the Ni/nc-Si:H bilayer films during the post-deposition heat-treatments. The intensity of the photoluminescence spectra of the post-deposition heat-treated films gradually increased at wavelengths of ∼420 as well as ∼580 nm with raising the annealing temperature from 350 to 500$^{∘}$C. It is highly likely that the increase of the photoluminescence intensity is caused by the increase in the total volume of the nanocrystallites in the films. It was found that the nickel-induced crystallization processing enhanced the formation of Si cystallites with the size of ∼2 and ∼5 nm in the films. |
| Starting Page | 937 |
| Ending Page | 940 |
| Page Count | 4 |
| File Format | |
| ISSN | 13853449 |
| Journal | Journal of Electroceramics |
| Volume Number | 17 |
| Issue Number | 2-4 |
| e-ISSN | 15738663 |
| Language | English |
| Publisher | Kluwer Academic Publishers |
| Publisher Date | 2006-01-01 |
| Publisher Place | Boston |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Si Nanocrystallite Nickel-induced crystallization Photoluminescence Electrochemistry Optical and Electronic Materials Characterization and Evaluation Materials Ceramics, Glass, Composites, Natural Methods Crystallography |
| Content Type | Text |
| Resource Type | Article |
| Subject | Ceramics and Composites Materials Chemistry Mechanics of Materials Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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