NDLI: Enhancement of the surface and structural properties of ZnO epitaxial films grown on Al$_{2}$O$_{3}$ substrates utilizing annealed ZnO buffer layers

Content Provider	Springer Nature Link
Author	Konenko, Oleg Jung, Yeon Sik Choi, Won Kook Kima, Tae Whan
Copyright Year	2006
Abstract	ZnO films were grown on Al$_{2}$O$_{3}$ (1000) substrates without and with ZnO buffer layers by using radio-frequency magnetron sputtering. Atomic force microscopy images showed that the surface roughness of the ZnO films grown on ZnO buffer layers annealed in a vacuum was decreased, indicative of an improvement in the ZnO surfaces. X-ray diffraction patterns showed that the crystallinity of the ZnO thin films was enhanced by using the annealed ZnO buffer layer in comparison with the film grown on without a buffer layer. The improvement of the surface and structural properties of the ZnO films might be attributed to the formation of the Zn-face ZnO buffers due to annealing in a vacuum. These results indicate that the surface and structural properties of ZnO films grown on Al$_{2}$O$_{3}$ substrates are improved by using ZnO buffer layers annealed in a vacuum.
Starting Page	283
Ending Page	285
Page Count	3
File Format	PDF
ISSN	13853449
Journal	Journal of Electroceramics
Volume Number	17
Issue Number	2-4
e-ISSN	15738663
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2006-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	ZnO epilayer Annealed ZnO buffer layer Surface property Structural property Polarity Electrochemistry Optical and Electronic Materials Characterization and Evaluation Materials Ceramics, Glass, Composites, Natural Methods Crystallography
Content Type	Text
Resource Type	Article
Subject	Ceramics and Composites Materials Chemistry Mechanics of Materials Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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