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Nanostructural and optical features of nc-Si:H films prepared by nickel-induced crystallization
| Content Provider | Semantic Scholar |
|---|---|
| Author | Shim, J.-H. Cho, Nam-Hee |
| Copyright Year | 2006 |
| Abstract | A 30-nm-thick Ni layer was deposited on top of the nc-Si:H (hydrogenated nanocrystalline Si) films by rf-magnetron sputter, and then heat-treatments were carried out at temperatures of 350–500∘C. Si nanocrystallites were formed in the Ni/nc-Si:H bilayer films during the post-deposition heat-treatments. The intensity of the photoluminescence spectra of the post-deposition heat-treated films gradually increased at wavelengths of ∼420 as well as ∼580 nm with raising the annealing temperature from 350 to 500∘C. It is highly likely that the increase of the photoluminescence intensity is caused by the increase in the total volume of the nanocrystallites in the films. It was found that the nickel-induced crystallization processing enhanced the formation of Si cystallites with the size of ∼2 and ∼5 nm in the films. |
| Starting Page | 937 |
| Ending Page | 940 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1007/s10832-006-0464-2 |
| Volume Number | 17 |
| Alternate Webpage(s) | https://page-one.live.cf.public.springer.com/pdf/preview/10.1007/s10832-006-0464-2 |
| Alternate Webpage(s) | https://doi.org/10.1007/s10832-006-0464-2 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
